THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE METHOD FOR MANUFACTURING THE SAME

摘要

A three dimensional semiconductor memory device and a method for manufacturing the same are provided. The three dimensional semiconductor memory device includes an electrode structure where insulating patterns extended in the first direction on a substrate and horizontal electrodes are alternately stacked repeatedly; a semiconductor pillar connected to the substrate through the electrode structure; a charge storage layer between the semiconductor pillar and the electrode structure; a tunnel insulating layer between the charge storage layer and the semiconductor pillar; and a blocking insulating layer between the charge storage layer and the electrode structure. Each horizontal electrode includes a metal stopper formed between a gate electrode and the blocking insulating layer and the gate electrode.