| 摘要 |
PURPOSE: A gallium nitride nanostructure forming method using nanospheres is provided to form the gallium nitride nanostructure having a 3-dimentional shape in a short period of time by arraigning a plurality of nanoshperes on a top surface of a substrate and forming a nanopattern. CONSTITUTION: A galluim nitride nanostructure forming method using nanospheres comprises the steps of: (S110) arranging a plurality of nanospheres on a top surface of a substrate at a single layer; (S120) forming a nanopattern having multiple hemispherical grooves on the top surface of the substrate by allowing a silicasol solution to be permeated through gaps between the plurality of nanospheres; (S130) removing the plurality of nanosphers by using a chemical dissolving method or a combustion method; (S140) heating the nanopattern removed with the nanospheres at a constant temperature to crystallize the nanopattern; (S150) forming a zinc oxide nanostructure having a rod shape inside each of the hemispherical grooves of the crystallized nanopattern; and (S160) heterobinding gallium nitride(GaN) on an outer surface of the zinc oxide nanostructure to form a gallium nitride nanostructure. [Reference numerals] (S110) Step of arranging nanospheres; (S120) Step of forming a nanopattern; (S130) Step of removing the nanospheres; (S140) Step of heat-treating; (S150) Step of forming a ZnO nanostructure; (S160) Step of forming a rod-type GaN nanostructure; (S170) Step of forming a pyramid type GaN nanostructure |
