METHOD FOR MANUFACTURING EUV MASKS MINIMIZING THE IMPACT OF SUBSTRATE DEFECTS

摘要

The present invention relates to manufacture of extreme ultraviolet photolithography masks. Following operations are performed to generate a set of masks of number N. a set of mask blank of the number N (N is integer which is larger than 1) is provided. An individual map in positions of detects (D) of each mask blank is generated by using an inspection machine. A connection map of the defects of the masks is generated by substituting the positions of the defects detected during mapping of the various mask blanks to a predetermined useful zone which is common to all masks. Individual defect zones (ZD) enclosing the defect and individually connected to each defect are defined. A primary version of layouts of the masks of the number n is generated by locally considering the existence of each detects at the connection map to prevent critical elements from being located in connection zones in design rules based on the design rules and a generated structure. Each mask is generated by using the individual layouts obtained one among the mask blanks.