发明名称 |
PROPOSAL AND FABRICATION METHOD OF VERTICALLY STRUCTURED ELECTRON-HOLE BILAYER TUNNEL FIELD EFFECT TRANSISTOR WITH INDEPENDENT AND SYMMETRIC DOUBLE GATE |
摘要 |
<p>The present invention relates to an electronic-hole double layer tunnel field effect transistor, where a source region, a channel and a drain region are arranged at a substrate in a vertical direction, including a double gate structure. The present invention relates to the electronic-hole double layer tunnel field effect transistor and a manufacturing method thereof capable of increasing the degree of integration of the transistor at the substrate by having a vertical structure, being the electronic-hole double layer tunnel field effect transistor by applying different electrodes to the double gate structure, improving the inclination under threshold voltage and increasing operating current by using a double gate p-i-n structure and tunneling between bands, and having an implementable symmetrical double gate structure by proposing a gate of a symmetrical structure.</p> |
申请公布号 |
KR101368191(B1) |
申请公布日期 |
2014.02.28 |
申请号 |
KR20130000434 |
申请日期 |
2013.01.03 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
LEE, SEOK HEE;JEONG, WOO JIN;KIM, TAE KYUN;MOON, JUNG MIN;HWANG, BYEONG WOON |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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