发明名称 |
SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT |
摘要 |
Provided is a semiconductor element in which atomic interdiffusion between a semiconductor region and an electrode is suppressed and increase in the contact resistance is suppressed even in cases where the semiconductor element is exposed to high temperatures during the production processes or the like. A semiconductor element of the present invention is provided with: a semiconductor region that contains silicon; an electrode that contains aluminum; and a diffusion barrier layer that is interposed between the semiconductor region and the electrode and contains germanium. The germanium content in at least a part of the diffusion barrier layer is 4 at% or more. |
申请公布号 |
KR20140024460(A) |
申请公布日期 |
2014.02.28 |
申请号 |
KR20147001064 |
申请日期 |
2012.07.19 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO |
发明人 |
MAEDA TAKEAKI;OKUNO HIROYUKI;YOKOTA YOSHIHIRO |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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