| 摘要 |
The equality of a chemical processing width of an edge part of a substrate and the degradation of processing efficiency are suppressed while the chemical processing width is narrowed. A substrate processing device, performing the chemical processing of the substrate by using processing solution having a reaction speed faster as temperature becomes higher, includes a substrate maintaining part maintaining a horizontal state of the substrate, a rotating part rotating the substrate maintained by the substrate maintaining part in the horizontal state, a heating part heating the substrate by spraying heating steam to a central part of the substrate bottom, and an edge processing part performing the chemical processing of the edge part by supplying the processing solution from the top to the edge part of the substrate heated by the heating part. As the processing solution is supplied from the top of the substrate while being heated from its bottom, when the processing solution is supplied from the top to an area of a desired narrow width of an end part of the substrate, the chemical processing width can be narrowed while suppressing the degradation of processing efficiency (etching rate) and the equality of the chemical processing width (etching width). [Reference numerals] (131) Steam supply source; (132) Processing solution supply source; (133) Rinse solution supply source; (134) N_2 gas supply source; (138) N_2 gas heater; (139) Heater; (151) Control part; (152) Valve control tool; (154) Chuck rotating tool |
