| 摘要 |
A nonvolatile memory includes a memory cell array including a plurality of nonvolatile memory cells connected to bit lines and word lines crossing the bit lines, a voltage driver configured to provide a word line voltage to the word lines and provide a first voltage during a precharging operation and a second voltage during a sensing operation, based on a voltage setting signal, and a page buffer unit configured to adjust a precharging level of a sensing node connected to a bit line of a page included in a selected memory block of the memory cell array using the first voltage and adjust a sensing level of the sensing node using the second voltage. |
