SPUTTERING TARGET, METHOD FOR USING THE SAME, AND METHOD FOR FORMING OXIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide a sputtering target which enables an In-Zn oxide film with a high degree of crystallinity to be formed and a method for using the sputtering target.SOLUTION: The sputtering target includes a polycrystalline In-Zn oxide containing a plurality of crystal grains whose average grain size is greater than or equal to 0.06 μm and less than or equal to 3 μm. Further, the crystal grains each have a cleavage plane, and as the method for using the sputtering target, sputtered particles are separated from the cleavage planes by collision of an ion with the sputtering target, and the sputtered particles are positively charged and deposited on a deposition surface uniformly while repelling with each other.