| 摘要 |
Aspects of the invention relate to techniques of defect injection for transistor-level fault simulation. A circuit element in a circuit netlist of a circuit is first selected for defect injection. Next, a defect is determined based on whether the selected circuit element is a design-intent circuit element or a parasitic circuit element. After the defect is determined, the defect is injected into the circuit netlist and then the circuit is simulated. |
