| 摘要 |
A method for transferring InP film onto a stiffener substrate, the method including: providing a structure comprising an InP surface layer and an underlying doped thin InP layer; implanting hydrogen ions through the surface layer so as to create a weakened plane in the doped thin layer, delimiting a film comprising the surface layer; placing the surface layer in close contact with a stiffener substrate; and applying heat treatment to obtain splitting at the weakened plane and transfer of the film onto the stiffener substrate. |
