| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-efficiency semiconductor light-emitting element with high crystal quality.SOLUTION: There is provided a semiconductor light-emitting element including an n-type first semiconductor layer containing a nitride semiconductor, a p-type second semiconductor layer containing a nitride semiconductor, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The light-emitting layer includes a first well layer containing a nitride semiconductor, a second well layer provided between the first well layer and the second semiconductor layer and containing a nitride semiconductor, a first barrier layer, and a first Al-containing layer. The first barrier layer is provided between the first well layer and the second well layer, has larger band-gap energy than that of the first well layer and the second well layer, and contains a nitride semiconductor. The first Al-containing layer is in contact with the second well layer between the first barrier layer and the second well layer, and contains AlGaN(0.1≤x1≤0.35). |
