| 发明名称 |
Method of Forming Interlayer Dielectrics |
| 摘要 |
A method of forming interlayer dielectric comprising the steps of forming a first undoped layer, forming in-situ and sequentially a doped layer and a second undoped layer on the first undoped layer, and planarizing the second undoped layer. |
| 申请公布号 |
US2014057439(A1) |
申请公布日期 |
2014.02.27 |
| 申请号 |
US201213591209 |
申请日期 |
2012.08.21 |
| 申请人 |
ZHANG JIANDONG;FANG HAN CHUAN;ZHANG JIANJUN;SHU XIAOWEI;ZHANG MIAO |
发明人 |
ZHANG JIANDONG;FANG HAN CHUAN;ZHANG JIANJUN;SHU XIAOWEI;ZHANG MIAO |
| 分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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