发明名称 |
Dynamic Random Access Memory Unit And Method For Fabricating The Same |
摘要 |
A dynamic random access memory unit and a method for fabricating the same are provided. The dynamic random access memory unit comprises: a substrate; an insulating buried layer formed on the substrate; a body region formed on the insulating buried layer and used as a charge storing region; two isolation regions formed on the body region, in which a semiconductor contact region is formed between the isolation regions and is a charge channel; a source, a drain and a channel region formed on the isolation regions and the semiconductor contact region respectively and constituting a transistor operating region which is partially separated from the charge storing region by the isolation regions and connected with the charge storing region via the charge channel; a gate dielectric layer formed on the transistor operating region, a gate formed on the gate dielectric layer; a source metal contact layer, a drain metal contact layer. |
申请公布号 |
US2014054546(A1) |
申请公布日期 |
2014.02.27 |
申请号 |
US201213703722 |
申请日期 |
2012.10.18 |
申请人 |
LIU LIBIN;LIANG RENRONG;WANG JING;XU JUN;TSINGHUA UNIVERSITY |
发明人 |
LIU LIBIN;LIANG RENRONG;WANG JING;XU JUN |
分类号 |
H01L29/775;H01L27/108;H01L29/66;H01L29/78 |
主分类号 |
H01L29/775 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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