| 摘要 |
An electronic device may include a substrate, a buried oxide (BOX) layer overlying the substrate, at least one semiconductor device overlying the BOX layer, and at least one STI region in the substrate and adjacent the at least one semiconductor device. The at least one STI region defines a sidewall surface with the substrate and may include a nitride layer lining a bottom portion of the sidewall surface, an oxide layer lining a top portion of the sidewall surface above the bottom portion, and an insulating material within the nitride and oxide layers. |
