发明名称 |
Fe-Co BASED ALLOY SPUTTERING TARGET MATERIAL, METHOD FOR PRODUCING THE SAME, SOFT MAGNETIC THIN FILM LAYER, AND VERTICAL MAGNETIC RECORDING MEDIUM USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide an Fe-Co based alloy sputtering target material not cracked during sputtering.SOLUTION: Disclosed is a sputtering target material satisfying 0≤X≤100, 4≤Y≤28 by atomic ratio in the formula (1) of an Fe-Co-M based alloy, the microstructure of the sputtering target material comprises a phase essentially consisting of Fe and Co and an intermetallic compound phase consisting of one or two kinds of Fe and Co and an M element(s), and in which the area of an eutectic structure occupying in the whole of the microstructure is 30% or less: (Fe-Co)M(1). |
申请公布号 |
JP2014037569(A) |
申请公布日期 |
2014.02.27 |
申请号 |
JP20120179811 |
申请日期 |
2012.08.14 |
申请人 |
SANYO SPECIAL STEEL CO LTD |
发明人 |
HASEGAWA HIROYUKI;SAWADA TOSHIYUKI;MATSUBARA YOSHIAKI |
分类号 |
C22C38/00;C22C1/04;C22C19/07;C22C30/00;C22C33/02;C23C14/34;H01F10/14;H01F10/16;H01F41/18 |
主分类号 |
C22C38/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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