EVALUATION METHOD, SEMICONDUCTOR DEVICE, ELECTRO-OPTIC DEVICE, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a method that accurately extracts state density.SOLUTION: A semiconductor device 1000 includes: a semiconductor layer 10 having a first region 11 including an N-type semiconductor region N, a second region 12 including a P-type semiconductor region P, and a third region 13 sandwiched between the first region 11 and the second region 12 in a plan view; a first electrode 21 connected to the first region 11; a second electrode 22 connected to the second region 12; and a third electrode 23 facing the third region 13 via a dielectric film DF overlapping the third region 13. In the semiconductor device 1000, the state density of the third region 13 is measured by measuring CV characteristics between the first electrode 21 and the third electrode 23 or between the second electrode 22 and the third electrode 23. The upper half of a band gap is calculated using the CV characteristics between the third electrode 23 and the N-type semiconductor region and the lower half of the band gap is calculated using the CV characteristics between the third electrode 23 and the P-type semiconductor region, and defect level density Dis accurately extracted over the entire band gap by relatively easy measurement work.