发明名称 HIGH-EFFICIENCY BIAS VOLTAGE GENERATING CIRCUIT
摘要 Disclosed are bias voltage generating circuits and methods for a switching power supply. In one embodiment, a switching power supply can include: (i) a driver circuit configured to receive a bias voltage, and to drive a switch in a power stage of the switching power supply; (ii) where a ratio of an output voltage of the switching power supply to an expected bias voltage of the driver circuit is configured as a proportionality coefficient; (iii) a bias voltage generating circuit configured to generate the bias voltage for the driver circuit based on a first voltage; and (iv) an H-shaped inductor coupled to an input of the bias voltage generating circuit, where the first voltage is configured to be generated based on a number of turns of the H-shaped inductor and the proportionality coefficient.
申请公布号 US2014056047(A1) 申请公布日期 2014.02.27
申请号 US201313960945 申请日期 2013.08.07
申请人 SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD 发明人 KUO HSU HUNG
分类号 H02M7/06 主分类号 H02M7/06
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