发明名称 High Voltage Resistor
摘要 Provided is a semiconductor device. The semiconductor device includes a resistor and a voltage protection device. The resistor has a spiral shape. The resistor has a first portion and a second portion. The voltage protection device includes a first doped region that is electrically coupled to the first portion of the resistor. The voltage protection device includes a second doped region that is electrically coupled to the second portion of the resistor. The first and second doped regions have opposite doping polarities.
申请公布号 US2014057407(A1) 申请公布日期 2014.02.27
申请号 US201314074435 申请日期 2013.11.07
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHENG CHIH-CHANG;LIU RUEY-HSIN;YAO CHIH-WEN;SU RU-YI;YANG FU-CHIH;TSAI CHUN LIN
分类号 H01L29/66 主分类号 H01L29/66
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