发明名称 SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD
摘要 <p>The present invention relates to a substrate treatment apparatus and to a substrate treatment method, which enable a thin film deposited on a substrate to have uniform characteristics and enable the quality of the thin film to be easily controlled. The substrate treatment apparatus according to the present invention comprises: a process chamber having a process space; a chamber lid for covering the top of the process chamber; a substrate support unit arranged inside the process chamber so as to support and move at least one substrate; a source gas spray unit arranged in the chamber lid in order to spray source gas to the source gas spray region defined on the substrate support unit; a reaction gas spray unit arranged in the chamber lid in order to spray reaction gas to the reaction gas spray region defined on the substrate support unit; and a purge gas spray unit arranged in the chamber lid so as to spray purge gas to the purge gas spray region defined between the source gas spray region and the reaction gas spray region. The distance between the purge gas spray unit and the substrate is shorter than the distance between the source gas spray unit and the substrate and the distance between the reaction gas spray unit and the substrate.</p>
申请公布号 WO2014030973(A1) 申请公布日期 2014.02.27
申请号 WO2013KR07593 申请日期 2013.08.23
申请人 JUSUNG ENGINEERING CO., LTD. 发明人 HAN, JEUNG HOON;KIM, YOUNG HOON;HWANG, CHUL JOO
分类号 H01L21/205 主分类号 H01L21/205
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