| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit punch-through at a lateral face of a trench in which an electrode is embedded and inhibit the occurrence of leakage current.SOLUTION: In a semiconductor device 1 which comprises: an SiC epitaxial layer 3 in which a trench 7 having a lateral face 5 and a bottom face 6; a p type layer 8 formed in the SiC epitaxial layer 3 of the lateral face 5 and the bottom face 6 of the trench 7; an ntype layer 10 formed so as to contact the p type layer 8; a back electrode 13 electrically connected to the ntype layer 10; a surface electrode 14 embedded in the trench 7 and electrically connected to the p type layer 8, a barrier formation layer 15 is formed between the lateral face 5 of the trench 7 and the surface electrode 14 for forming a higher potential barrier between the p type layer 8 and the barrier formation layer 15 is higher than a potential barrier between the p type layer 8 and the surface electrode 14. |
