SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can manufacture a transistor having lesser leakage current.SOLUTION: A semiconductor device manufacturing method comprises: forming a first insulation film on a semiconductor substrate; patterning the first insulation film to form a first opening and a second opening in the first insulation film; forming first sidewall films on a lateral face of the first opening and a lateral face of the second opening, respectively; etching the semiconductor substrate by using the first insulation film and the first sidewall films as masks to dig down the first opening and the second opening; removing the first sidewall films to form a first off-set part and a second off-set part each including a part of a surface of the semiconductor substrate in the first opening and the second opening, respectively; and etching a bottom face of the first opening by using the first insulation film as a mask.