| 摘要 |
A method of operating a resistive memory device, includes; performing a data retention time test on a resistive memory cell array of a memory chip, determining a number of bad memory blocks of the resistive memory cell array on the basis of the data retention time test, determining on the basis of the number of bad memory blocks whether the memory chip is a refresh memory chip or a good memory chip, and upon determining that the memory chip is a refresh memory chip, performing at least one refresh operation on at least one bad memory block of the refresh memory chip. |
