SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

The present invention regarding a semiconductor device and a method for manufacturing thereof is disclosed. The disclosed semiconductor device comprises; a high electron mobility transistor (HEMT) formed on a first area of a substrate; and a diode formed on a second area of the substrate. The HEMT and the diode can be electrically connected. The HEMT and the diode can be separately placed on the upper side of the substrate in a horizontal direction. A semiconductor layer can be placed on a part of the substrate and the HEMT can be placed on the semiconductor layer. The diode can be placed on the other part of the substrate in which the semiconductor layer is not formed. The HEMT and the diode, for example, can be connected as a cascode type.