| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device of low power consumption which has memory cell arrays arranged three-dimensionally.SOLUTION: A semiconductor storage device according to an embodiment comprises: a semiconductor substrate having principal surfaces which are planes expanding in an X-direction and in a Y-direction; and a memory cell block formed on the semiconductor substrate, in which a plurality of memory cell arrays are arranged in the Y-direction, each including a plurality of column lines which extend in a Z-direction and are arranged in the X-direction, and a plurality of row lines which extend in the X-direction and are arranged in the Z-direction; and a plurality of memory cells arranged at cross parts of the plurality of column lines and the plurality of row lines, respectively. The memory cell includes a variable resistive element made of a transition metal oxide as a material. At least either of the plurality of column lines or the plurality of row lines is polysilicon wiring made of polysilicon as a material. The memory cell block has a block film between the variable resistive element and the polysilicon wiring of the memory cell. |
