发明名称 |
SEMICONDUCTOR PROCESSING WITH DC ASSISTED RF POWER FOR IMPROVED CONTROL |
摘要 |
Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber. |
申请公布号 |
US2014057447(A1) |
申请公布日期 |
2014.02.27 |
申请号 |
US201313829669 |
申请日期 |
2013.03.14 |
申请人 |
APPLIED MATERIALS, INC.;APPLIED MATERIALS, INC. |
发明人 |
YANG JANG-GYOO;CHEN XINGLONG;PARK SOONAM;BAEK JONGHOON;GARG SAURABH;VENKATARAMAN SHANKAR |
分类号 |
H01L21/3065;H01L21/67 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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