发明名称 |
High Purity Carbon Nanotube, Process For Preparing The Same And Transparent Conductive Film Using The Same |
摘要 |
Problem To provide a process for producing single-walled carbon nanotubes with which highly pure, high-quality single-walled carbon nanotubes can be produced with high efficiency, and to provide a transparent conductive film using the single-walled carbon nanotubes obtained by that production method. Solution A process for producing single-walled carbon nanotubes by chemical vapor deposition (CVD), wherein particles of a nonmetallic material containing 500 ppm or lower of metallic impurities including metals and compounds thereof are used as growth nuclei; and after a growth gas is introduced into a furnace used for growing carbon nanotubes, the growth gas used in an initial stage of growth of carbon nanotubes and the growth gas used in a stage of growth of regular carbon nanotubes (stationary growth stage) thereafter are prepared to different compositions and different partial pressures. |
申请公布号 |
US2014056800(A1) |
申请公布日期 |
2014.02.27 |
申请号 |
US201313764981 |
申请日期 |
2013.02.12 |
申请人 |
NIPPON KAYAKU KABUSHIKI KAISHA;OSAKA UNIVERSITY |
发明人 |
KOBAYASHI YOSHIHIRO;NEGISHI RYOTA;KORIYAMA SHOJI;AGATA SHOGO;FUJIMOTO KAZUKI;ARIFUKU MICHIHARU;SHINMOTO MASAKI;IMAIZUMI MASAHIRO;KIYOYANAGI NORIKO |
分类号 |
C01B31/02 |
主分类号 |
C01B31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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