METHOD FOR GROWING SILICON SINGLE CRYSTAL

摘要

The present invention relates to a large diameter silicon single crystal using a czochralski method which comprises the following steps: a step for dipping a seed crystal into a molten silicon solution; and a step for increasing a melt gap for controlling thermal stress on the lower side of a neck after the dipping step as a neck process. The melt gap increasing step includes: a step of reducing the thermal stress by increasing the melt gap; a step of setting a threshold value of the thermal stress for increasing the diameter of the neck; and a step of increasing the diameter of the neck for supporting a high weight ingot while increasing the melt gap in the condition where the thermal stress is below the threshold value.