| 摘要 |
A photoelectric conversion element of an embodiment includes: a light absorbing layer containing Cu, at least one Group IIIb element selected from the group including Al, In and Ga, and S or Se, and having a chalcopyrite structure; and a buffer layer formed from Zn and O or S, in which the ratio S/(S+O) in the area extending in the buffer layer up to 10 nm from the interface between the light absorbing layer and the buffer layer, is equal to or greater than 0.7 and equal to or less than 1.0. |
