| 摘要 |
<p>Disclosed is an N-polar high electron mobility transistor (HEMT) device having an InGaN channel for the formation of a two dimensional electron gas (2DEG) layer. This new channel layer provides improved electron transport. It has higher electron mobility and high field velocity which enables higher frequency radio frequency (RF) performance. The device may also include a GaN cap layer deposited on top of the InGaN channel layer which provides a double confinement for the 2DEG.</p> |
