发明名称 |
ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GAN TRANSISTORS |
摘要 |
<p>A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.</p> |
申请公布号 |
KR20140023892(A) |
申请公布日期 |
2014.02.27 |
申请号 |
KR20137022218 |
申请日期 |
2012.01.31 |
申请人 |
EFFICIENT POWER CONVERSION CORPORATION |
发明人 |
LIDOW ALEXANDER;BEACH ROBERT;NAKATA ALANA;CAO JIANJUN;ZHAO GUANG YUAN;STRITTMATTER ROBERT |
分类号 |
H01L29/778;H01L21/335 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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