发明名称 Differential Sensing Method and System for STT MRAM
摘要 The invention relates to methods and systems for reading a memory cell and in particular, an STT MRAM. In accordance with one aspect of the invention, a system for reading a memory cell includes a read path and a precharge path. The reference current is provided through the read path and is sampled via a sampling element in the read path. Subsequently, a current from the memory cell is provided through the same sampling element and read path. The output level is then determined by the cell current working against the sampled reference current.
申请公布号 US2014056058(A1) 申请公布日期 2014.02.27
申请号 US201213592404 申请日期 2012.08.23
申请人 JEFREMOW MIHAIL;ALLERS WOLF;OTTERSTEDT JAN;PETERS CHRISTIAN;KERN THOMAS;INFINEON TECHNOLOGIES AG 发明人 JEFREMOW MIHAIL;ALLERS WOLF;OTTERSTEDT JAN;PETERS CHRISTIAN;KERN THOMAS
分类号 G11C7/12;G11C7/00;G11C11/16 主分类号 G11C7/12
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