发明名称 TERMINAL STRUCTURE, AND SEMICONDUCTOR ELEMENT AND MODULE SUBSTRATE COMPRISING THE SAME
摘要 A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under bump metal layer containing Ni, filling the opening on the electrode; and a dome-shaped bump containing Sn and Ti, covering the under bump metal layer, wherein at least part of the under bump metal layer has a portion sandwiched between the external electrode and the insulating covering layer.
申请公布号 US2014054769(A1) 申请公布日期 2014.02.27
申请号 US201313960291 申请日期 2013.08.06
申请人 TDK CORPORATION 发明人 YOSHIDA KENICHI;ORIKASA MAKOTO;SEIKE HIDEYUKI;HORIKAWA YUHEI;ABE HISAYUKI
分类号 H01L23/00 主分类号 H01L23/00
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