SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device using a low-resistance SiC substrate.SOLUTION: A semiconductor device manufacturing method comprises: forming on a silicon carbide substrate (1) having a first impurity concentration, a first silicon carbide layer (5) having a second impurity concentration by epitaxial growth at a deposition temperature of 1550-1600°C; forming on the first silicon carbide layer, a first conductivity type second silicon carbide layer (6) having a third impurity concentration so as to satisfy a relationship represented as (second impurity concentration)>(first impurity concentration)>(third impurity concentration); forming a semiconductor element on a top face of the second silicon carbide layer; cutting a rear face of the silicon substrate after forming the semiconductor element to expose the first silicon carbide layer (5); and forming an electrode on the exposed first silicon carbide layer.