SEMICONDUCTOR STRUCTURE PROVIDED WITH GERMANIUM-OXIDE-CONTAINING FILM ON TOP OF GERMANIUM LAYER, AND MANUFACTURING METHOD THEREFOR

摘要

A semiconductor structure provided with a germanium layer (30) and an insulating film that contains the following: a germanium-oxide-containing film (32) formed on top of the germanium layer; and a high-dielectric-oxide film (34) that is formed on top of the germanium-oxide-containing film and has a higher relative permittivity than silicon oxide. The EOT of the insulating film is less than or equal to 2 nm, and if a voltage relative to the germanium layer of 1 V over the flat-band voltage is applied to an accumulation-region side of a gold metal film formed on top of the insulating film, the leakage current is less than or equal to 10-5×EOT+4 A/cm2.