| 摘要 |
A solar cell element comprising a p-side electrode; a p-type group III-group V compound semiconductor layer; an n-type group III-group V compound semiconductor layer; an n-side group III-group V compound electrode layer; and a VxZn1-x layer. The p-side electrode is electrically connected to the p-type group III-group V compound semiconductor layer. The p-type group III-group V compound semiconductor layer, the n-type group III-group V compound semiconductor layer, the n-side group III-group V compound electrode layer, and the VxZn1-x layer are stacked in this order. The VxZn1-x layer is in contact with the n-side group III-group V compound electrode layer; x represents a value of not less than 0.3 and not more than 0.99; and the VxZn1-x layer has a thickness of not less than 1 nanometer and not more than 5 nanometers. |
