| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can sufficiently cure a light curable adhesion layer in a simple technique to obtain good connectivity between a semiconductor element and a substrate.SOLUTION: A semiconductor device manufacturing method comprises a connection process of arranging a semiconductor element 11 with a width of 1 mm and under via a light curable adhesion layer 12, on a light-transmissive substrate 13 placed on a stage 2 and connecting the semiconductor element 11 to the light-transmissive substrate 13 by application of pressure by a thermocompression bonding head 3 and light irradiation by light irradiation devices 4a, 4b. In the connection process, by irradiating light from the light irradiation devices 4a, 4b from obliquely above both sides of the semiconductor element 11 in a width direction, the adhesion layer 12 is cured. Since the width of the semiconductor element 11 is 1 mm and under, sufficient quantities of light can be irradiated on the adhesion layer 12 only by light irradiation from both sides of the semiconductor element 11 in the width direction and good connectivity between the semiconductor element 11 and the light-transmissive substrate 13 can be obtained. |
