| 摘要 |
PROBLEM TO BE SOLVED: To inhibit the occurrence of substrate current in a Dt (Dynamic threshold) MOS transistor.SOLUTION: When a MOS transistor 10 in which a gate electrode 15 and a body region 13 are short-circuited is formed, pn junction (junction between n-type region 17, p-type region 18) having reverse polarity to pn junction between a source/drain region 14 and the body region 13 or an insulator 19 is formed between a bottom part of the source/drain region of the MOS transistor 10 and the body region 13, and an insulator 19 is formed between at least a part of a side wall of the source/drain region 14 and the body region 13. |
