| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method, which can prevent decrease in breakdown voltage between a gate and a drain and make a high-voltage DMOS transistor deliver sufficient performance.SOLUTION: A DMOS gate insulation film 22 of a semiconductor device 1 in which an HV-DMOS 2, an HV-CMOS 3 and an LV-CMOS 4 are provided on a common semiconductor substrate 5 comprises: a first insulation film 14 which is formed in a part outside of a DMOS channel region 17 and which is the same in thickness with each of an HV-nMOS gate insulation film 35 and an HV-pMOS gate insulation film 47; and a second insulation film 15 which is formed in a part on the DMOS channel region 17 and which is the same in thickness with each of an LV-nMOS gate insulation film 54 and an LV-pMOS gate insulation film 63. |
