| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor substrate capable of protecting a channel layer from external light, and a method of manufacturing the same.SOLUTION: The thin-film transistor substrate of the present invention comprises: a base substrate; an active pattern which is disposed on the base substrate and includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode; a gate insulating pattern disposed on the active pattern; a gate electrode which is disposed on the gate insulating pattern and overlaps the channel; and a light shielding pattern which is disposed between the base substrate and the active pattern and has a larger area than the active pattern. |
