NON-VOLATILE MEMORY ELEMENT HAVING PROGRAM CURRENT CLAMP AND RELATED METHOD

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile memory element having a program current clamp and a related method.SOLUTION: There is provided a method for programming a non-volatile memory cell having a selection transistor and a memory transistor. The method includes steps of: applying preliminarily set limit currents to the first input of the memory cell; applying a limit voltage to a current limit circuit electrically connected to the second input of the memory cell; applying a limit voltage for stabilizing the voltage drop of the memory cell; and applying an inclined gate voltage to the memory cell for programming the memory cell with preliminarily set limit currents determined by the current limit circuit.