SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To inhibit variation in a threshold value of switching.SOLUTION: A silicon carbide semiconductor device comprises: a silicon carbide substrate having a first surface and a second surface P2; a first region 181 and a third region 183, each of which has a first conductivity type; and a second region 182 and a fourth region 184, each of which has a second conductivity type. The third region 183 surrounds the second region 182 on the second surface P2. The fourth region 184 has an impurity concentration higher than an impurity concentration of the second region 182, and contacts the second region 182, and surrounds the third region 184 on the second surface P2. The silicon carbide semiconductor device further comprises: a first main electrode provided on the first surface; a second main electrode contacts both of the third and the fourth regions; and a gate insulation film provided on the second region.