发明名称 PLASMA-INDUCED CVD METHOD
摘要 PROBLEM TO BE SOLVED: To reduce a time period required for a seasoning process when a silicon compound is deposited in a remote plasma-induced CVD method to improve productivity.SOLUTION: In a seasoning process of a remote plasma-induced CVD method in which a vacuum vessel is separated into a plasma generation space and a substrate processing space with a partition wall, while in general a material gas is flowed in the plasma generation space and a silicon containing gas is flowed in the substrate processing space, by flowing in both material gas and silicon containing gas into the plasma generation space, a time period required for the seasoning process can be significantly reduced.
申请公布号 JP2014038874(A) 申请公布日期 2014.02.27
申请号 JP20100250138 申请日期 2010.11.08
申请人 CANON ANELVA CORP 发明人 SOMEYA RYO;OGATA TETSUO;WATANABE EISAKU
分类号 H01L21/205;C23C16/42;C23C16/50;H01L21/316;H01L21/318 主分类号 H01L21/205
代理机构 代理人
主权项
地址