SEMICONDUCTOR STRUCTURE PROVIDED WITH ALUMINUM-NITRIDE-OXIDE FILM ON TOP OF GERMANIUM LAYER, AND MANUFACTURING METHOD THEREFOR

摘要

A semiconductor structure provided with a germanium layer (30) and an aluminum-nitride-oxide film (32) formed on top of said germanium layer. The EOT of said aluminum-nitride-oxide film is less than or equal to 2 nm. Letting Cit represent the capacitance, at a frequency of 1 MHz, between the germanium layer and a gold metal film formed on top of the aluminum-nitride-oxide film when a voltage of 0.5 V relative to the germanium layer is applied to the metal film on an inversion-region side and letting Cacc represent the capacitance between the germanium layer and the metal film in an accumulation region, Cit/Cacc is less than or equal to 0.4.