SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

摘要

Provided are a semiconductor structure and a manufacturing method therefor. The method comprises the following steps: providing a substrate (100), forming a grating stack on the substrate (100) and forming source/drain regions (110) in the substrate (100); etching the source/drain regions (110), so as to form grooves (111); forming contact layers (112) on the surfaces of the etched source/drain regions (110); forming stress generation material layers (113) in the grooves (111); and depositing an interlayer dielectric layer (300) and forming a contact plug which is in contact with the stress generation material. The grooves (111) are formed by etching the source/drain regions (110), so as to increase the exposed regions of the source/drain regions (110); then the contact layers (112) are formed on the surfaces of the source/drain regions (110), and the grooves (111) are filled with the stress generation material; and stress is also introduced into a channel while effectively reducing the contact resistance between the source/drain regions (110) and the contact layers (112), so that the carrier mobility in the channel is improved, thereby improving the performance of the semiconductor structure.