| 摘要 |
PROBLEM TO BE SOLVED: To provide positive resist materials having higher resolution than existing ones and small line edge roughness, showing a good pattern shape after the light exposure, giving resist membranes with better etching resistances, and to provide the pattern formation method.SOLUTION: This invention is positive resist materials composed of a base resin in which the hydrogen atom of the carboxyl group is substituted with the acid-unstable group indicated in the formula (1). (R, Rare an alkyl group or an alkenyl group, R, Rare a single bond, a methylene group, ethylene group, or propylene group, but both the Rand Rcannot be single bonds at the same time. R, Rare a hydrogen atom or alkyl group, but both the Rand Rcannot be hydrogen atoms at the same time.) The positive resist materials in this invention show extremely high alkali dissolution rate contrast before and after the light exposure and show high resolution. The pattern shape and edge roughness after the light exposure is good. They also suppress especially acid diffusion rates and show excellent etching resistance. |
