发明名称 |
RESISTIVE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF |
摘要 |
A method for programming a resistive memory device includes: programming a resistive memory; generating a verification data based on comparison result of a voltage, which is generated from a current flowing through the resistive memory, and a verification reference voltage which is higher than a read reference voltage used for a normal read operation; and deciding whether to end a program operation based on the verification data. |
申请公布号 |
US2014056054(A1) |
申请公布日期 |
2014.02.27 |
申请号 |
US201213591812 |
申请日期 |
2012.08.22 |
申请人 |
KIM YOUNCHEUL;JEONG JEONGSU;KANG YONGGU |
发明人 |
KIM YOUNCHEUL;JEONG JEONGSU;KANG YONGGU |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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