| 发明名称 |
METHOD FOR FORMING SILICON OXIDE FILM OF SEMICONDUCTOR DEVICE |
| 摘要 |
A method for forming a silicon oxide film of a semiconductor device is disclosed. The method of forming the silicon oxide film of the semiconductor device includes performing surface processing using an amine-based compound, so that the uniformity and density of the silicon oxide film may be improved. |
| 申请公布号 |
US2014057458(A1) |
申请公布日期 |
2014.02.27 |
| 申请号 |
US201313840551 |
申请日期 |
2013.03.15 |
| 申请人 |
LEE GEUN SU;SK HYNIX INC. |
发明人 |
PARK HYUNG SOON;HONG KWON;LEE JONG MIN;KIM HYUNG HWAN;HAN JI HYE;LEE GEUN SU |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
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