发明名称 |
TRENCH DEVICES HAVING IMPROVED BREAKDOWN VOLTAGES AND METHOD FOR MANUFACTURING SAME |
摘要 |
In one embodiment, the present invention includes a semiconductor power device. The semiconductor power device comprises a trenched gate and a trenched field region. The trenched gate is disposed vertically within a trench in a semiconductor substrate. The trenched field, region is disposed vertically within the trench and below the trenched gate. A lower portion of the trenched field region tapers to dispose an electric field. |
申请公布号 |
US2014054683(A1) |
申请公布日期 |
2014.02.27 |
申请号 |
US201213646906 |
申请日期 |
2012.10.08 |
申请人 |
CHUANG CHIAO-SHUN;HUANG TONY |
发明人 |
CHUANG CHIAO-SHUN;HUANG TONY |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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