Transistor Devices, Memory Cells, And Arrays Of Memory Cells

摘要

A transistor device includes a pair of source/drain regions having a channel region there-between. A first gate is proximate the channel region. A gate dielectric is between the first gate and the channel region. A second gate is proximate the channel region. A programmable material is between the second gate and the channel region. The programmable material includes at least one of a) a multivalent metal oxide portion and an oxygen-containing dielectric portion, or b) a multivalent metal nitride portion and a nitrogen-containing dielectric portion. Memory cells and arrays of memory cells are disclosed.