| 摘要 |
Disclosed is a nitride semiconductor light-emitting element (100) comprising a p-type nitride semiconductor layer 1 (108), a p-type nitride semiconductor layer 2 (109), and a p-type nitride semiconductor layer 3 (110) placed in order above a nitride semiconductor active layer (107), wherein the p-type nitride semiconductor layer 1 (108) and p-type nitride semiconductor layer 2 (109) each contain Al, the average Al composition of the p-type nitride semiconductor layer 1 (108) is equivalent to the average Al composition of the p-type nitride semiconductor layer 2 (109), the p-type nitride semiconductor layer 3 (110) has a smaller band gap than the p-type nitride semiconductor layer 2 (109), the p-type impurity concentration of the p-type nitride semiconductor layer 2 (109) and the p-type impurity concentration of the p-type nitride semiconductor layer 3 (110) are both lower than the p-type impurity concentration of the p-type nitride semiconductor layer 1 (108), and a method for producing same. |
